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ESA8UN3244-70TS-S 参数 Datasheet PDF下载

ESA8UN3244-70TS-S图片预览
型号: ESA8UN3244-70TS-S
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 8MX32, 70ns, CMOS, PSMA72]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 8 页 / 126 K
品牌: FUJITSU [ FUJITSU COMPONENT LIMITED. ]
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February 1997
Revision 1.1
ESA8UN324(2/4)-(60/70)(J/T)(G/S)-S
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
An initial pulse of at least 200
µ
s is required after power-up followed by a minimum of eight RAS* cycles before device operation
is achieved.
V
IH
(min.) and V
IL
(max.) are reference levels for measuring timing of input signals. Transition times are measured between V
IH
(min.) and V
IL
(max.) and are assumed to be 5 ns for all inputs.
Measure with a load equivalent of 2 TTL loads and 100pF.
Operation within the t
RCD
(max.) limit ensures that t
RAC
(max.) limit can be met; t
RCD
(max.) is specified as a reference point
only. If t
RCD
is greater than the specified t
RCD
(max) limit, then access time is controlled exclusively by t
CAC
.
Assumes that t
RCD
t
RCD
(max.).
This parameter defines the time at which the output achieves open circuit condition and is not referenced to V
OH
or V
OL
.
t
WCS
is a non restrictive operating parameter. It is included in the data sheet as an electrical characteristic only. If t
WCS
t
WCS
(min.)
the cycle is an early write cycle and the data-out pin will remain at high impedance for the duration of the cycle.
Either t
RCH
or t
RRH
must be satisfied for a read cycle.
These parameters are referenced to the CAS* leading edge in early write cycles.
10. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as a reference point only. If
t
RAD
is greater than the specified t
RAD
(max.) limit, then access time is controlled by t
AA
.
11. Access time is determined by the longer of t
AA
, t
CAC
, or t
ACP
.
12. t
RASC
defines RAS* pulse width in fast page mode cycles.
Physical Dimensions
72-pin SIMM
4.250
3.984
Note
1.000
max.
0.250
0.125
Dia.
0.400
1
72
0.225 min.
0.080
0.250
0.050
3.750
±
0.002
0.250
0.050
+0.004/-0.003
(All dimensions are in inches with
±
0.005" tolerance unless otherwise specified. Do not scale drawing)
Notes:
Thickness
= 0.350 for SOJ DRAM
= 0.150 for TSOP DRAM
6
Fujitsu Microelectronics, Inc.