February1997
Revision 1.1
DATA SHEET
ESA8UN324(2/4)-(60/70)(J/T)(G/S)-S
32MByte (8M x 32) CMOS EDO DRAM Module
General Description
The ESA8UN324(2/4)-(60/70()J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module
organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA8UN3242 supports
2K refresh. ESA8UN3244 supports 4K refresh.
The module utilizes sixteen, Fujitsu MB811(7/6)405A-(60/70)PJ CMOS 4Mx4 EDO dynamic RAM in a surface mount package
on an epoxy laminate substrate. Each device is accompanied by a decoupling capacitor for improved noise immunity.
Control lines provided are such that byte control is possible.
Features
• High Density: 32MByte
• Fast Access Time of 60/70 ns (max.)
• Low Power:
Active (60/70 ns)
4.7/4.0 W (max.) - 2K
3.4/2.9 W (max.) - 4K
176mW (max.) - Standby (TTL)
88mW (max.) - Standby (CMOS)
• TTL-compatible inputs and outputs
• Separate power and ground planes
• Single power supply of 5V±10%
• Height: 1.00 inch
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperate
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
-1 to +7.0
8
0 to +70
-55 to +125
-50 to +50
Unit
V
W
°
C
°
C
mA
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0 to +70
°C)
Symbol
V
CC
V
SS
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High voltage
Input Low voltage
Min
4.5
0
2.4
-1
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1
0.8
Unit
V
V
V
V
Fujitsu Microelectronics, Inc.
1
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
