November 1996
Revision 1.1
DATA SHEET
EDC1UV641(1/4)-(60/70)(J/T)G-S
8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V
General Description
The EDC1UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module
organized as 1M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.
The module utilizes four, Fujitsu MB81V1(8/6)165A-(60/70) (PJ/FN) CMOS 1Mx16 EDO dynamic RAMs in a surface mount
package on an epoxy laminate substrate. Each device is accompanied by a decoupling capacitor for improved noise immunity.
Control lines provided are such that byte control is possible. Serial PD on the module is provided by using 128 byte serial EEPROM.
Features
• High Density: 8MByte
• Fast Access Time of 60/70 ns (max.)
• Low Power: 2.6/2.4 W (max.) - Active (60/70 ns) : 1KR
1.6/1.4 W (max.) - Active (60/70 ns) : 4KR
29mW (max.)
- Standby (LVTTL)
14mW (max.)
- Standby (CMOS)
• LVTTL-compatible inputs and outputs
• Separate power and ground planes to improve noise immunity
• Single power supply of 3.3V±0.3V
• Height: 0.86 inch
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperate
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
-0.5 to +4.6
4
0 to +70
-55 to +125
50
Unit
V
W
°
C
°
C
mA
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0 to +70
°C)
Symbol
V
CC
V
SS
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High voltage
Input Low voltage
Min
3.0
0
2.0
-0.3
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
0.8
Unit
V
V
V
V
Fujitsu Microelectronics, Inc.
1
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
