D A T A S H E E T
Test Conditions
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Min
Typ
Max
±1.0
35
Unit
µA
VIN = VSS to VCC
,
ILI
Input Load Current
VCC = VCC max
ILIT
ILO
A9 Input Load Current
Output Leakage Current
VCC = VCC max; A9 = 12.5 V
µA
VOUT = VSS to VCC
,
±1.0
µA
VCC = VCC max
5 MHz
1 MHz
7
2
12
4
VCC Active Read Current
(Notes 1, 2)
ICC1
CE# = VIL, OE# = VIH
mA
VCC Active Write Current
(Notes 2, 3, 5)
ICC2
ICC3
ICC4
CE# = VIL, OE# = VIH
15
0.2
0.2
30
5
mA
µA
µA
VCC Standby Current (Note 2)
CE# = VCC ± 0.3 V
Automatic Sleep Mode Current VIH = VCC 0.3 V;
(Notes 2, 4)
5
VIL = VSS ± 0.3 V
VIL
VIH
Input Low Voltage
Input High Voltage
–0.5
0.8
V
V
0.7 x VCC
VCC + 0.3
Voltage for Autoselect and
Temporary Sector Unprotect
VID
VCC = 3.3 V
11.5
12.5
0.45
V
VOL
VOH1
VOH2
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
IOH = –2.0 mA, VCC = VCC min
IOH = –100 µA, VCC = VCC min
V
V
0.85 VCC
VCC – 0.4
Output High Voltage
Low VCC Lock-Out Voltage
(Note 5)
VLKO
2.3
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC currents listed are tested with VCC=VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 200 nA.
5. Not 100% tested.
October 11, 2006 22140D6
Am29LV010B
23
FUJITSU [ FUJITSU ]
