Data Sheet, Rev. 4
June 2001
A1751A DWDM Analog
Forward-Path or Return-Path Laser Modules
Characteristics (continued)
Table 2. Additional Characteristics
Parameter
Bias Current1
Symbol
Conditions
Min
Max
Unit
IB
ITH
η
BOL
—
—
120
30
mA
mA
Threshold Current
Slope Efficiency2
25 °C, BOL
IP = ITH + 20 and
ITH + 60
0.10
—
mW/mA
Monitor Photocurrent
IMON
IOP = 0 mA, VRM = 5 V,
TOP = 25 °C
10
200
µA/mW
Operating Chip Temperature3
TEC Current
TOP
ITEC
IF = IOP
18
35
°C
A
–40 °C < TC < 85 °C,
TOP = 15 °C—35 °C,
IF = 60 mA
–1.5
1.5
TEC Voltage
VTEC
RTH
TOP = 15 °C—35 °C over TC
–2.5
—
3.8
10.5
—
V
Thermistor Resistance
Optical Return Loss
TOP = 25 °C
TC
kΩ
dB
dB
RL
40
Side Mode Suppression Ratio
SMSR
IF = IOP
30
—
1. Bias point at which all specifications apply.
2. For 10 mW output power. Minimum slope efficiency is lower for lower-power lasers.
3. Chip temperature at which wavelength specification is met. Operating chip temperature is reported for each laser.
Electrical Schematics
1
2
3
4
5
6
7
14
NC
ISOLATOR
13 (+)
(–)
12
(–)
(+)
(+)
(–)
11 (+)
10
9
NC
CASE
GROUND
8
CASE
GROUND
TEC
1-1233(F)
Figure 1. A1751A Laser Schematic
3
Agere Systems Inc.
FUJITSU [ FUJITSU ]
