7MBP100RA060
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Symbol Condition
Min.
3
Typ.
Max.
18
Unit
mA
mA
V
Iccp
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
-
-
fsw=0 to 15kHz Tc=-20 to 100°C *7
ICCN
10
65
fsw=0 to 15kHz Tc=-20 to 100°C *7
Vin(th)
1.00
1.25
1.35
1.70
O N
V
1.60
8.0
1.95
OFF
V
VZ
Input zener voltage
-
-
Rin=20k ohm
°C
°C
°C
°C
A
TCOH
TCH
TjOH
TjH
Over heating protection temperature level
Hysteresis
110
-
-
125
VDC=0V, Ic=0A, Case temperature Fig.1
20
-
-
-
-
-
-
IGBT chips over heating protection temperature level
Hysteresis
150
-
-
surface of IGBT chips
20
IOC
Collector current protection level
INV
DB
150
75
-
-
Tj=125°C Collector current
Tj=125°C Collector current
Tj=25°C Fig.2
A
IOC
-
µs
V
tDOC
VUV
VH
Over current protection delay time
Under voltage protection level
Hysteresis
10
11.0
-
12.5
V
0.2
1.5
-
-
-
ms
µs
ohm
tALM
tSC
Alarm signal hold time
2
-
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM
-
12
Tj=25°C Fig.3
RALM
1425
1500
1575
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Symbol Condition
Min.
Typ.
Max.
Unit
µs
Switching time (IGBT)
Switching time (FWD)
ton
toff
trr
IC=100A, VDC=300V
0.3
-
-
-
-
-
-
3.6
µs
IF=100A, VDC=300V
0.4
µs
Thermal characteristics(Tc=25°C)
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
Max.
Unit
Junction to Case thermal resistance
INV
DB
IGBT
FWD
IGBT
-
-
-
0.31
0.70
0.63
-
°C/W
°C/W
°C/W
°C/W
Case to fin thermal resistance with compound
0.05
Recommendable value
Item
Symbol
Min.
200
13.5
Typ.
Max.
Unit
V
DC bus voltage
VDC
VCC
fSW
-
-
400
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
15
-
16.5
20
V
1
kHz
N·m
N·m
Screw torque
Mounting (M5)
Terminal (M5)
2.5
2.5
-
3.0
3.0
-
-
FUJI [ FUJI ELECTRIC ]
