2MBI300N-060-04
IGBT Module
Switching time vs. RG
Vcc=300V, Ic=300A, VGE=±15V, Tj=25°C
500
Dynamic input characteristics
Tj=25°C
25
Switching time : ton, tr, toff, tf [n sec.]
1000
Collector-Emitter voltage : VCE [V]
400
20
300
15
100
200
10
100
5
10
1
2
Gate resistance : RG [ohm]
10
20
0
0
500
1000
Gate charge : Qg [nC]
1500
0
Forward current vs. Forward voltage
VGE=0V
500
700
Reverse recovery characteristics
trr, Irr, vs. IF
Reverse recovery current : Irr [A]
Reverse recovery time : trr [n sec.]
600
Forward current : IF [A]
500
400
100
300
200
100
0
0
1
Forward voltage : VF [V]
守
保
re
ot
N
2
3
mm
co
4
止
廃
for
nd
e
50
0
定
予
ne
100
de
w
種
n.
機
sig
300
400
500
200
Forward current : IF [A]
Transient thermal resistance
3000
Reversed biased safe operating area
>
+VGE=15V, -VGE < 15V, Tj < 125°C, RG = 6.8 ohm
=
=
Thermal resistance : Rth (j-c) [°C/W]
2500
Collector current : Ic [A]
0.1
2000
1500
1000
0.01
500
0
0.001
0.01
0.1
1
0
100
Pulse width : PW [sec.]
200
300
400
500
Collector-Emitter voltage : VCE [V]
600
Gate-Emitter voltage : VGE [V]
FUJI [ FUJI ELECTRIC ]
