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FT245BM 参数 Datasheet PDF下载

FT245BM图片预览
型号: FT245BM
PDF下载: 下载PDF文件 查看货源
内容描述: USB FIFO ( USB - 并行) I.C. [USB FIFO ( USB - Parallel ) I.C.]
分类和应用: 外围集成电路先进先出芯片
文件页数/大小: 24 页 / 552 K
品牌: FTDI [ FUTURE TECHNOLOGY DEVICES INTERNATIONAL LTD. ]
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FT245BM USB FIFO ( USB - Parallel ) I.C.  
POWER AND GND GROUP  
Pin#  
6
Signal  
Type  
Description  
3V3OUT  
OUT  
3.3 volt Output from the integrated L.D.O. regulator This pin should be decoupled  
to GND using a 33nF ceramic capacitor in close proximity to the device pin. Its  
prime purpose is to provide the internal 3.3V supply to the USB transceiver cell  
and the RSTOUT# pin. A small amount of current (<= 5mA) can be drawn from  
this pin to power external 3.3V logic if required.  
3,26  
13  
VCC  
PWR  
PWR  
+4.35 volt to +5.25 volt VCC to the device core, LDO and none-FIFO interface  
pins.  
VCCIO  
+3.0 volt to +5.25 volt VCC to the FIFO interface pins 10..12, 14..16 and 18..25.  
When interfacing with 3.3V external logic in a bus powered design connect  
VCCIO to a 3.3V supply generated from the USB bus. When interfacing with  
3.3V external logic in a self powered design connect VCCIO to the 3.3V supply  
of the external logic. Otherwise connect to VCC to drive out at 5V CMOS level.  
9,17  
30  
GND  
PWR  
PWR  
PWR  
Device - Ground Supply Pins  
AVCC  
AGND  
Device - Analog Power Supply for the internal x8 clock multiplier  
Device - Analog Ground Supply for the internal x8 clock multiplier  
29  
Note 1 : In Input Mode, these pins are pulled to VCCIO via internal 200K resistors. These can be programmed to  
gently pull low during USB suspend ( PWREN# = “1” ) by setting this option in the EEPROM.  
Note 2: During device reset, these pins are tri-state but pulled up to VCCIO via internal 200K resistors.  
Note 3: During device reset, these pins are tri-state but pulled up to VCC via internal 200K resistors.  
DS245B Version 1.7  
© Future Technology Devices Intl. Ltd. 2005  
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