TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
– 55°C
VCE = 2.0 V
2.0
TJ = 25°C
1.6
IC = 0.3 A
1.0 A
3.0 A
100
70
50
30
1.2
0.8
10
7.0
5.0
0.5 0.7 1.0
0.03 0.05 0.07 0.1
0.3
IC, COLLECTOR CURRENT (AMP)
0.4
3.0
0
1.0
2.0
5.0
10
20
50
100
IB, BASE CURRENT (mA)
200
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0.3 0.5
1.0
2.0 3.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
TJ = 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
θ
VB FOR VBE
*θVC FOR VCE(sat)
*APPLIES FOR IC/IB
≤
hFE/2
TJ = – 65°C TO + 150°C
0
0.003 0.005 0.01 0.02 0.03 0.05
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
R BE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS)
Figure 11. Temperature Coefficients
103
IC, COLLECTOR CURRENT (
µ
A)
102
101
100
10–1
10–2
VCE = 30 V
TJ = 150°C
107
IC = 10 x ICES
IC
≈
ICES
VCE = 30 V
106
105
104
103
102
20
100°C
REVERSE
25°C
ICES
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
FORWARD
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
40
60
80
100
120
140
160
10–3
– 0.4 – 0.3 – 0.2 – 0.1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut–Off Region
Figure 13. Effects of Base–Emitter Resistance
3–4
Motorola Bipolar Power Transistor Device Data
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
