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MWE6IC9100NBR1 参数 Datasheet PDF下载

MWE6IC9100NBR1图片预览
型号: MWE6IC9100NBR1
PDF下载: 下载PDF文件 查看货源
内容描述: RF LDMOS宽带集成功率放大器 [RF LDMOS Wideband Integrated Power Amplifiers]
分类和应用: 放大器射频微波功率放大器高功率电源
文件页数/大小: 23 页 / 875 K
品牌: FREESCALE [ Freescale ]
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PRODUCT DOCUMENTATION  
Refer to the following documents to aid your design process.  
Application Notes  
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages  
AN1949: Mounting Method for the MHVIC910HR2 (PFP-16) and Similar Surface Mount Packages  
AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages  
Engineering Bulletins  
EB212: Using Data Sheet Impedances for RF LDMOS Devices  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
0
1
Feb. 2007  
May 2007  
Initial Release of Data Sheet  
Changed Device box to 960 MHz to reflect functional test frequency, p. 1  
Added Power Added Efficiency to GSM EDGE Application Typical Performances, p. 1  
Changed “5:1 VSWR, @ 28 Vdc” to “10:1 VSWR, @ 32 Vdc” in the Capable of Handling bullet, p. 1  
Added Footnote (1) to Quiescent Current Thermal Tracking bullet under Features section and to  
Quiescent Current Temperature Compensation in Fig. 1, Functional Block Diagram, p. 1  
Added top-level, 2-stage block diagram depiction to Fig. 2, Pin Connections; updated Note, p. 1  
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2  
Added Stage 1 and Stage 2 DC Electrical Characteristics tables, p. 2, 3  
In Table 6, Component Designations and Values, corrected Part Number ATC100B331JT500XT to  
ATC100B331JT200XT for C24 capacitor, p. 4  
Updated Figs. 7 and 8, Power Gain versus Output Power, to remove non-variable I  
value, p. 6  
DQ  
Updated Fig. 9, Intermodulation Distortion Products versus Output Power, to show PEP and not CW;  
corrected frequency value to show 100 kHz Tone Spacing, p. 7  
Updated graphical representation of Ideal/Actual in Fig. 11, Pulsed CW Output Power versus Input Power,  
to show correct 3 and 6 dB compression points, p. 7  
2
June 2007  
Removed Case Operating Temperature from Maximum Ratings table, p. 2. Case Operating Temperature  
rating will be added to the Maximum Ratings table when parts’ Operating Junction Temperature is  
increased to 225°C.  
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1  
RF Device Data  
Freescale Semiconductor  
22  
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