PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1949: Mounting Method for the MHVIC910HR2 (PFP-16) and Similar Surface Mount Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Feb. 2007
May 2007
•
Initial Release of Data Sheet
•
•
•
•
Changed Device box to 960 MHz to reflect functional test frequency, p. 1
Added Power Added Efficiency to GSM EDGE Application Typical Performances, p. 1
Changed “5:1 VSWR, @ 28 Vdc” to “10:1 VSWR, @ 32 Vdc” in the Capable of Handling bullet, p. 1
Added Footnote (1) to Quiescent Current Thermal Tracking bullet under Features section and to
Quiescent Current Temperature Compensation in Fig. 1, Functional Block Diagram, p. 1
•
•
•
•
Added top-level, 2-stage block diagram depiction to Fig. 2, Pin Connections; updated Note, p. 1
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
Added Stage 1 and Stage 2 DC Electrical Characteristics tables, p. 2, 3
In Table 6, Component Designations and Values, corrected Part Number ATC100B331JT500XT to
ATC100B331JT200XT for C24 capacitor, p. 4
•
•
Updated Figs. 7 and 8, Power Gain versus Output Power, to remove non-variable I
value, p. 6
DQ
Updated Fig. 9, Intermodulation Distortion Products versus Output Power, to show PEP and not CW;
corrected frequency value to show 100 kHz Tone Spacing, p. 7
•
•
Updated graphical representation of Ideal/Actual in Fig. 11, Pulsed CW Output Power versus Input Power,
to show correct 3 and 6 dB compression points, p. 7
2
June 2007
Removed Case Operating Temperature from Maximum Ratings table, p. 2. Case Operating Temperature
rating will be added to the Maximum Ratings table when parts’ Operating Junction Temperature is
increased to 225°C.
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
RF Device Data
Freescale Semiconductor
22