Peripheral operating requirements and behaviors
Table 19. Flash command timing specifications (continued)
Symbol Description
Min.
Typ.
Max.
Unit
Notes
Word-write to FlexRAM for EEPROM operation
teewr16bers Word-write to erased FlexRAM location
execution time
—
175
260
μs
Word-write to FlexRAM execution time:
teewr16b8k
teewr16b16k
teewr16b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
340
385
475
1700
1800
2000
μs
μs
μs
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
360
540
μs
Longword-write to FlexRAM execution time:
teewr32b8k
teewr32b16k
teewr32b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
545
630
810
1950
2050
2250
μs
μs
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
Table 20. Flash high voltage current behaviors
Symbol
Description
Min.
Typ.
Max.
Unit
IDD_PGM
Average current adder during high voltage
flash programming operation
—
2.5
6.0
mA
IDD_ERS
Average current adder during high voltage
flash erase operation
—
1.5
4.0
mA
6.4.1.4 Reliability specifications
Table 21. NVM reliability specifications
Typ.1
Symbol Description
Min.
Program Flash
Max.
Unit
Notes
tnvmretp10k Data retention after up to 10 K cycles
tnvmretp1k Data retention after up to 1 K cycles
nnvmcycp Cycling endurance
5
50
—
—
—
years
years
cycles
20
100
50 K
10 K
2
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
50
—
years
Table continues on the next page...
K20 Sub-Family Data Sheet, Rev. 4 5/2012.
32
Freescale Semiconductor, Inc.
FREESCALE [ Freescale ]
