Freescale Semiconductor, Inc.
EEPROM-1
EEPGM — EEPROM Program/Erase Enable Bit
This read/write bit enables the internal charge pump and applies the
programming/erasing voltage to the EEPROM array if the EELAT bit
is set and a write to a valid EEPROM location has occurred. Reset
clears the EEPGM bit.
1 = EEPROM programming/erasing power switched on
0 = EEPROM programming/erasing power switched off
NOTE: Writing logic 0s to both the EELAT and EEPGM bits with a single
instruction will clear EEPGM only to allow time for the removal of high
voltage.
6.4.8 EEPROM Non-Volatile Register and EEPROM Array Configuration Register
The EEPROM non-volatile register (EENVR1) and array configuration
register (EEACR1) are shown in Figure 6-2 and Figure 6-3.
Address: $FE1C
Bit 7
6
5
4
3
2
1
Bit 0
Read:
Write:
Reset:
EERA
CON2
CON1 EEPRTCT EEBP3
EEBP2
EEBP1
EEBP0
Programmed value or 1 in the erased state
= Unimplemented
Figure 6-2. EEPROM-1 Non-Volatile Register (EENVR1)
Address: $FE1F
Bit 7
6
5
4
3
2
1
Bit 0
Read: EERA
Write:
CON2
CON1 EEPRTCT EEBP3
EEBP2
EEBP1
EEBP0
Reset:
EENVR
= Unimplemented
Figure 6-3. EEPROM-1 Array Control Register (EEACR1)
Technical Data
MC68HC908AS60 — Rev. 1.0
EEPROM-1
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