H11AA1 H11AA2 H11AA3 H11AA4
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)(1)
Characteristic
INPUT LED
Forward Voltage
(IF = 10 mA, either direction)
TA = –55°C
TA = 100°C
Capacitance (V = 0 V, f = 1 MHz)
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
(VCE = 10 V)
TA = 100°C
Collector–Base Dark Current (VCB = 10 V)
Collector–Emitter Breakdown Voltage (IC = 10 mA)
Collector–Base Breakdown Voltage (IC = 100
µA)
Emitter–Collector Breakdown Voltage (IE = 100
µA)
DC Current Gain (IC = 2 mA, VCE = 5 V) (Typical Value)
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V)
Collector–Base Capacitance (f = 1 MHz, VCB = 0 V)
Emitter–Base Capacitance (f = 1 MHz, VEB = 0 V)
COUPLED
Output Collector Current
(IF = 10 mA, VCE = 10 V)
H11AA1,3,4
H11AA2
All devices
ICEO
—
—
—
—
30
70
5
—
—
—
—
1
1
1
0.2
45
100
7.8
500
1.7
20
10
100
200
—
—
—
—
—
—
—
—
—
nA
nA
µA
nA
Volts
Volts
Volts
—
pF
pF
pF
H11AA1,3,4
H11AA2
All devices
All devices
VF
—
—
—
—
—
1.15
1.15
1.3
1.05
20
1.5
1.8
—
—
—
Volts
Symbol
Min
Typ
(1)
Max
Unit
CJ
pF
ICBO
V(BR)CEO
V(BR)CBO
V(BR)ECO
hFE
CCE
CCB
CEB
IC (CTR)(2)
"
H11AA1
H11AA2
H11AA3
H11AA4
H11AA1,3,4
2 (20)
1 (10)
5 (50)
10 (100)
0.33
5 (50)
2 (20)
10 (100)
15 (150)
—
—
—
—
—
3
mA (%)
Output Collector Current Symmetry(3)
I
at I
F
C
I at I
F
C
+ )
10 mA, VCE
+
10 V
+
–10 mA, VCE
+
10 V
—
—
Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF =
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
1.
2.
3.
4.
"
10 mA)
VCE(sat)
VISO
RISO
CISO
—
7500
1011
—
0.1
—
—
0.2
0.4
—
—
—
Volts
Vac(pk)
Ω
pF
Always design to the specified minimum/maximum electrical limits (where applicable).
Current Transfer Ratio (CTR) = IC/IF x 100%.
This specification guarantees that the higher of the two IC readings will be no more than 3 times the lower at IF = 10 mA.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2
Motorola Optoelectronics Device Data
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
