欢迎访问ic37.com |
会员登录 免费注册
发布采购

CRCW12060000Z0EA 参数 Datasheet PDF下载

CRCW12060000Z0EA图片预览
型号: CRCW12060000Z0EA
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应利用Transis [RF Power Field Effect Transis]
分类和应用: 射频
文件页数/大小: 15 页 / 964 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
 浏览型号CRCW12060000Z0EA的Datasheet PDF文件第2页浏览型号CRCW12060000Z0EA的Datasheet PDF文件第3页浏览型号CRCW12060000Z0EA的Datasheet PDF文件第4页浏览型号CRCW12060000Z0EA的Datasheet PDF文件第5页浏览型号CRCW12060000Z0EA的Datasheet PDF文件第6页浏览型号CRCW12060000Z0EA的Datasheet PDF文件第7页浏览型号CRCW12060000Z0EA的Datasheet PDF文件第8页浏览型号CRCW12060000Z0EA的Datasheet PDF文件第9页  
Freescale Semiconductor
Technical Data
Document Number: MRF6V12500H
Rev. 3, 6/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 960 and 1215 MHz. These devices are suitable for use in pulse
applications.
Typical Pulse Performance: V
DD
= 50 Volts, I
DQ
= 200 mA,
Pulse Width = 128
μsec,
Duty Cycle = 10%
Application
Narrowband
Broadband
P
out
(W)
500 Peak
500 Peak
f
(MHz)
1030
960--1215
G
ps
(dB)
19.7
18.5
η
D
(%)
62.0
57.0
MRF6V12500HR3
MRF6V12500HSR3
960-
-1215 MHz, 500 W, 50 V
PULSE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
CASE 465-
-06, STYLE 1
NI-
-780
MRF6V12500HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF6V12500HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Case Temperature 80°C, 500 W Pulse, 128
μsec
Pulse Width, 10% Duty Cycle
Symbol
Z
θJC
Value
(2,3)
0.044
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2009--2010, 2012. All rights reserved.
MRF6V12500HR3 MRF6V12500HSR3
1
RF Device Data
Freescale Semiconductor, Inc.