TYPICAL CHARACTERISTICS
2000
P
out
, OUTPUT POWER (dBm) PULSED
1000
C
iss
66
65
64
63
62
61
60
59
35
V
DD
= 50 Vdc, I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100
sec,
20% Duty Cycle
36
37
38
39
40
41
42
P3dB = 61.9 dBm (1553 W)
P2dB = 61.7 dBm (1472 W)
Ideal
C, CAPACITANCE (pF)
100
C
oss
P1dB = 61.3 dBm
(1333 W)
Actual
10
C
rss
1
Measured with
30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
P
in
, INPUT POWER (dBm) PEAK
Note:
Each side of device measured separately.
Figure 4. Capacitance versus Drain-
-Source Voltage
26
25
G
ps
, POWER GAIN (dB)
24
23
G
ps
22
21
D
20
100
1000
P
out
, OUTPUT POWER (WATTS) PEAK
30
2000
50
40
V
DD
= 50 Vdc, I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100
sec,
20% Duty Cycle
90
80
D,
DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
70
60
26
25
24
23
22
21
20
19
18
17
16
0
Figure 5. Output Power versus Input Power
I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100
sec,
20% Duty Cycle
50 V
40 V
35 V
V
DD
= 30 V
200
400
600
800
1000
1200
1400
1600
45 V
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
90
80
D,
DRAIN EFFICIENCY (%)
70
60
50
40
30
20
I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100
sec,
20% Duty Cycle
0
200
400
600
800
1000
1200
1400
1600
V
DD
= 30 V
35 V
40 V
45 V
50 V
G
ps
, POWER GAIN (dB)
26
25
24
23
25_C
Figure 7. Power Gain versus Output Power
--30_C
25_C
90
80
D
,
DRAIN EFFICIENCY (%)
T
C
= --30_C
85_C 70
60
50
22 G
ps
21
20
19
100
D
85_C
V
DD
= 50 Vdc, I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100
sec,
20% Duty Cycle
1000
P
out
, OUTPUT POWER (WATTS) PEAK
40
30
20
2000
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 8. Drain Efficiency versus Output Power
Figure 9. Power Gain and Drain Efficiency versus
Output Power
MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
6
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
