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C3225JB2A105KT 参数 Datasheet PDF下载

C3225JB2A105KT图片预览
型号: C3225JB2A105KT
PDF下载: 下载PDF文件 查看货源
内容描述: RF功率LDMOS晶体管高耐用性N - 沟道增强 - 模式横向的MOSFET [RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs]
分类和应用: 晶体晶体管
文件页数/大小: 23 页 / 857 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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TYPICAL CHARACTERISTICS
10
9
10
8
MTTF (HOURS)
10
7
10
6
10
5
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 50 Vdc, P
out
= 1250 W CW, and
D
= 74.6%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 10. MTTF versus Junction Temperature — CW
V
DD
= 50 Vdc, I
DQ
= 100 mA, P
out
= 1250 W Peak
f
MHz
230
Z
source
1.29 + j3.54
Z
load
2.12 + j2.68
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured from
drain to drain, balanced configuration.
50
Input
Matching
Network
+
Device
Under
Test
--
Output
Matching
Network
50
--
Z
source
+
Z
load
Figure 11. Series Equivalent Test Circuit Source and Load Impedance — 230 MHz Pulse
MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
7