TYPICAL CHARACTERISTICS
65
T
C
= --30_C
25_C
55
V
DD
= 50 Vdc
I
DQ
= 150 mA
f = 130 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
25
30
35
40
45
G
ps
, POWER GAIN (dB)
85_C
27
26
25
24
23
22
21
20
10
100
P
out
, OUTPUT POWER (WATTS) PULSED
G
ps
η
D
V
DD
= 50 Vdc
I
DQ
= 150 mA
f = 130 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
1000
25_C
85_C
T
C
= --30_C
80
70
60
50
40
30
20
η
D,
DRAIN EFFICIENCY (%)
P
out
, OUTPUT POWER (dBm)
60
50
45
20
10
2000
P
in
, INPUT POWER (dBm) PULSED
Figure 10. Pulsed Output Power versus
Input Power
0.2
0.18
Z
JC
, THERMAL IMPEDANCE (°C/W)
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.00001
0.0001
0.001
0.01
D = 0.1
D = 0.5
D = 0.7
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
P
D
t
1
t
2
D = Duty Factor = t
1
/t
2
t
1
= Pulse Width
t
2
= Pulse Period
T
J
= P
D
* Z
JC
+ T
C
0.1
1
10
RECTANGULAR PULSE WIDTH (S)
Figure 12. Maximum Transient Thermal Impedance
10
8
10
9
MTTF (HOURS)
10
6
MTTF (HOURS)
90
110
130
150
170
190
210
230
250
10
7
10
8
10
7
10
5
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 50 Vdc, P
out
= 1000 W CW, and
η
D
= 72%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
10
6
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 50 Vdc, P
out
= 1000 W Peak, Pulse Width = 100
μsec,
Duty Cycle = 20%, and
η
D
= 71%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature - CW
-
MRF6VP11KHR6
6
Figure 14. MTTF versus Junction Temperature - Pulsed
-
RF Device Data
Freescale Semiconductor