Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 50
µA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 10 mA)
Drain - Source On - Voltage
(V
GS
= 10 V, I
D
= 0.05 A)
Forward Transconductance
(V
DS
= 10 V, I
D
= 0.1 A)
Dynamic Characteristics
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two - Tone Common Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
Output Power, 1 dB Compression Point, CW
(V
DD
= 28 Vdc, I
DQ
= 12 mA, f = 2170 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
G
ps
—
13
—
dB
C
oss
C
rss
—
—
45
0.62
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2
—
—
3
3.7
0.48
0.05
5
5
0.9
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
10
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
η
D
—
29
—
%
IMD
—
- 28
—
dBc
IRL
—
- 18
—
dB
P1dB
G
ps
η
D
IRL
—
12
35
- 10
0.85
13
38
- 16
—
—
—
—
W
dB
%
dB
MW4IC001NR4 MW4IC001MR4
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
