Freescale Semiconductor
Technical Data
Document Number: AFT21S230S_232S
Rev. 1, 11/2012
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 watt RF power LDMOS transistors are designed for cellular base
station applications covering the frequency range of 2110 to 2170 MHz.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ
= 1500 mA, P
out
= 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
16.7
17.0
17.2
D
(%)
30.5
31.0
31.8
Output PAR
(dB)
7.2
7.1
7.0
ACPR
(dBc)
--35.7
--35.4
--34.8
IRL
(dB)
--19
--20
--15
AFT21S230SR3
AFT21S232SR3
2110-
-2170 MHz, 50 W AVG., 28 V
Features
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
NI--780S--6: R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel.
NI--780S--2: R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 18.
N.C. 1
6 VBW
RF
in
/V
GS
2
5 RF
out
/V
DS
N.C. 3
(Top View)
4 VBW
NI-
-780S-
-6
AFT21S230S
Figure 1. Pin Connections
RF
in
/V
GS
2
1 RF
out
/V
DS
(Top View)
NI-
-780S-
-2
AFT21S232S
Figure 2. Pin Connections
Freescale Semiconductor, Inc., 2012. All rights reserved.
AFT21S230SR3 AFT21S232SR3
1
RF Device Data
Freescale Semiconductor, Inc.
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