Freescale Semiconductor
Technical Data
Document Number: MRF6V13250H
Rev. 0, 6/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at 1300 MHz.
These devices are suitable for use in pulsed and CW applications.
•
Typical Performance: V
DD
= 50 Volts, I
DQ
= 100 mA
Signal Type
Pulsed (200
μsec,
10% Duty Cycle)
P
out
(W)
250 Peak
f
(MHz)
1300
G
ps
(dB)
22.7
η
D
(%)
57.0
IRL
(dB)
--18
MRF6V13250HR3
MRF6V13250HSR3
1300 MHz, 250 W, 50 V
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Typical Performance: V
DD
= 50 Volts, I
DQ
= 10 mA, T
C
= 25
°C
Signal Type
CW
P
out
(W)
230 CW
f
(MHz)
1300
G
ps
(dB)
21.0
η
D
(%)
55.0
IRL
(dB)
--17
•
Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
at all Phase Angles
•
250 Watts Pulsed Peak Power, 10% Duty Cycle, 200
μsec
•
CW Capable
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Characterized from 20 V to 50 V for Extended Power Range
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
CASE 465-
-06, STYLE 1
NI-
-780
MRF6V13250HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF6V13250HSR3
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
--0.5, +120
--6.0, +10
-- 65 to +150
150
225
476
2.38
Unit
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Pulsed: Case Temperature 65°C, 250 W Pulsed, 200
μsec
Pulse Width, 10% Duty
Cycle, 50 Vdc, I
DQ
= 100 mA, 1300 MHz
CW: Case Temperature 77°C, 235 W CW, 50 Vdc, I
DQ
= 10 mA, 1300 MHz
Symbol
Value
(2,3)
Unit
°C/W
Z
θJC
R
θJC
0.07
0.42
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF6V13250HR3 MRF6V13250HSR3
1
RF Device Data
Freescale Semiconductor
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