TYPICAL CHARACTERISTICS
PAE, POWER
ADDED
EFFICIENCY (%)
−4
−8
ACPR (dBc)
−12
−16
−20
−24
IRL, INPUT RETURN
LOSS (dB)
IRL, INPUT RETURN
LOSS (dB)
ACPR (dBc)
PAE, POWER
ADDED
EFFICIENCY (%)
−4
−8
−12
−16
−20
−24
10
P
out
, OUTPUT POWER (WATTS) PEP
32
31.8
31.6
G
ps
, POWER GAIN (dB)
31.4
31.2
31
30.8
30.6
30.4
30.2
30
2060
2080
2100
2120
2140
2160
2180
2200
IRL
ACPR−L
PAE
G
ps
ACPR−U
V
DD
= 28 Vdc, P
out
= 4 W (Avg.)
I
DQ1
= 90 mA, I
DQ2
= 420 mA
Single−Carrier W−CDMA 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability
(CCDF)
16
15
14
13
−47
−48
−49
−50
−51
−52
−53
2220
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss, Power Added
Efficiency and ACPR versus Frequency @ P
out
= 4 Watts Avg.
31.6
31.4
31.2
G
ps
, POWER GAIN (dB)
31
30.8
30.6
30.4
30.2
30
29.8
29.6
2060
2080
2100
2120
2140
2160
2180
2200
IRL
ACPR−L
PAE
G
ps
ACPR−U
26
25
24
23
V
DD
= 28 Vdc, P
out
= 10 W (Avg.)
−38
I
DQ1
= 90 mA, I
DQ2
= 420 mA
Single−Carrier W−CDMA 3.84 MHz
−39
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability (CCDF) −40
−41
−42
−43
−44
2220
f, FREQUENCY (MHz)
Figure 6. Power Gain, Input Return Loss, Power Added
Efficiency and ACPR versus Frequency @ P
out
= 10 Watts Avg.
33
I
DQ2
= 630 mA
32
G
ps
, POWER GAIN (dB)
31
30
29
28
27
26
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
V
DD
= 28 Vdc, I
DQ1
= 90 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
420 mA
315 mA
210 mA
525 mA
G
ps
, POWER GAIN (dB)
34
33
32
31
30
29
28
27
26
1
45 mA
V
DD
= 28 Vdc, I
DQ2
= 420 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
100
I
DQ1
= 135 mA
112.5 mA
90 mA
67.5 mA
Figure 7. Two - Tone Power Gain versus
Output Power @ I
DQ1
= 90 mA
Figure 8. Two - Tone Power Gain versus
Output Power @ I
DQ2
= 420 mA
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
RF Device Data
Freescale Semiconductor
7
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
