TYPICAL CHARACTERISTICS — 520 MHz
50
45
P
out
, OUTPUT POWER (WATTS)
40
35
30
25
20
15
10
5
0
0
1
2
3
4
f = 520 MHz
5
6
V
DD
= 12.5 Vdc
P
in
= 0.3 W
V
DD
= 13.6 Vdc, P
in
= 0.6 W
V
DD
= 13.6 Vdc, P
in
= 0.3 W
V
DD
= 12.5 Vdc, P
in
= 0.6 W
V
GS
, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate-
-Source Voltage
20
19
18
G
ps
, POWER GAIN (dB)
17
16
15
14
13
12
11
0.03
0.1
P
in
, INPUT POWER (WATTS)
1
3
G
ps
P
out
V
DD
= 13.6 Vdc, I
DQ
= 10 mA
f = 520 MHz
η
D
90
80
P
out
, OUTPUT POWER (WATTS)
η
D
, DRAIN EFFICIENCY (%)
70
60
50
40
30
20
10
0
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power
V
DD
= 13.6 Vdc, I
DQ
= 10 mA, P
out
= 31 W Avg.
f
MHz
520
Z
source
Ω
0.72 + j1.77
Z
load
Ω
1.54 + j0.80
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
50
Ω
Input
Matching
Network
Device
Under
Test
50
Ω
Z
source
Z
load
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
