TYPICAL CHARACTERISTICS — 870 MHz
45
40
P
out
, OUTPUT POWER (WATTS)
35
30
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
V
DD
= 12.5 Vdc
P
in
= 0.3 W
f = 870 MHz
3
4
4.5
V
DD
= 13.6 Vdc, P
in
= 0.6 W
V
DD
= 12.5 Vdc, P
in
= 0.6 W
V
DD
= 13.6 Vdc, P
in
= 0.3 W
V
GS
, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. CW Output Power versus Gate-
-Source Voltage
19
18.5
G
ps
, POWER GAIN (dB)
18
17.5
17
16.5
16
15.5
15
0.01
0.1
P
in
, INPUT POWER (WATTS)
1
2
P
out
G
ps
V
DD
= 13.6 Vdc, I
DQ
= 500 mA
f = 870 MHz
80
70
P
out
, OUTPUT POWER (WATTS)
η
D
, DRAIN EFFICIENCY (%)
60
50
40
30
20
10
0
η
D
Figure 8. Power Gain, CW Output Power and
Drain Efficiency versus Input Power
V
DD
= 13.6 Vdc, I
DQ
= 500 mA, P
out
= 31 W Avg.
f
MHz
870
Z
source
Ω
0.28 -- j0.71
Z
load
Ω
0.98 -- j0.52
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
50
Ω
Input
Matching
Network
Device
Under
Test
50
Ω
Z
source
Z
load
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
