TYPICAL CHARACTERISTICS — 760--860 MHz BROADBAND
REFERENCE CIRCUIT
17
66
63
60
57
40
35
30
V
DQ
= 13.6 Vdc, P = 1 W
in
DD
I
= 100 mA
16.5
16
η
D
15.5
15
G
ps
P
out
14.5
14
750
770
790
810
830
850
870
890
f, FREQUENCY (MHz)
Figure 12. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
17
66
64
62
60
37
32
27
V
DQ
= 12.5 Vdc, P = 1 W
in
DD
I
= 100 mA
16.5
16
η
D
15.5
15
G
ps
P
out
14.5
14
750
770
790
810
830
850
870
890
f, FREQUENCY (MHz)
Figure 13. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
AFT09MS031NR1 AFT09MS031GNR1
11
RF Device Data
Freescale Semiconductor, Inc.