TYPICAL CHARACTERISTICS
26
25
G
ps
, POWER GAIN (dB)
24
23
22
21
20
19
18
17
1
10
P
out
, OUTPUT POWER (WATTS) CW
100
η
D
V
DD
= 28 Vdc
I
DQ
= 1100 mA
f = 465 MHz
25_C
85_C
G
ps
T
C
= −30_C
25_C
−30_C
90
80
η
D
,
DRAIN EFFICIENCY (%)
70
85_C 60
50
40
30
20
10
0
300
G
ps
, POWER GAIN (dB)
24
I
DQ
= 1100 mA
f = 465 MHz
23
22
21
20
0
50
V
DD
= 24 V
100
150
28 V
200
32 V
250
P
out
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
10
9
10
8
MTTF (HOURS)
10
7
10
6
10
5
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 28 Vdc, P
out
= 25 W Avg., and
η
D
= 30.2%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
7
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
