TYPICAL CHARACTERISTICS — TWO-
-TONE (SINGLE-
-ENDED NARROWBAND TEST CIRCUIT)
--10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
--20
--30
--40
--50
--60
--70
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
5th Order
V
DD
= 50 Vdc, I
DQ
= 350 mA, f1 = 854 MHz
f2 = 860 MHz, Two--Tone Measurements
--20
--25
--30
--35
--40
--45
--50
--55
--60
--65
1
10
TWO--TONE SPACING (MHz)
90
7th Order
V
DD
= 50 Vdc, P
out
= 90 W (PEP), I
DQ
= 350 mA
f = 860 MHz, Two--Tone Measurements
3rd Order
3rd Order
5th Order
7th Order
Figure 9. Intermodulation Distortion Products
versus Output Power
23.5
23
G
ps
, POWER GAIN (dB)
22.5
22
21.5
350 mA
300 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 450 mA
--10
--20
Figure 10. Intermodulation Distortion
Products versus Two-
-Tone Spacing
V
DD
= 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
--30
I
DQ
= 250 mA
--40
300 mA
--50
--60
350 mA
1
10
P
out
, OUTPUT POWER (WATTS) PEP
450 mA
100
200
21 250 mA
20.5
20
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
V
DD
= 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
Figure 11. Two-
-Tone Power Gain versus
Output Power
Figure 12. Third Order Intermodulation
Distortion versus Output Power
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
6
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
