TYPICAL CHARACTERISTICS
23
22
G
ps
, POWER GAIN (dB)
21
20
19
18
17
16
15
1
T
C
= −30_C
25_C
G
ps
85_C
25_C
−30_C
85_C
80
70
G
ps
, POWER GAIN (dB)
60
50
40
30
η
D
,
DRAIN EFFICIENCY (%)
23
I
DQ
= 350 mA
f = 880 MHz
22
21
20
η
D
V
DD
= 28 Vdc
I
DQ
= 350 mA
f = 880 MHz
10
20
10
0
100
19
28 V
V
DD
= 24 V
18
0
20
40
60
80
P
out
, OUTPUT POWER (WATTS) CW
100
32 V
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
P
out
, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10
8
MTTF (HOURS)
10
7
10
6
10
5
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device is
operated at V
DD
= 28 Vdc, P
out
= 10 W Avg., and
η
D
= 32%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9045NR1
8
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
