Freescale Semiconductor
Technical Data
Document Number: MRFE6VP61K25H
Rev. 4, 3/2013
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: V
DD
= 50 Volts, I
DQ
= 100 mA
Signal Type
Pulse
(100
sec,
20% Duty Cycle)
CW
P
out
(W)
1250 Peak
1250 CW
f
(MHz)
230
230
G
ps
(dB)
24.0
22.9
D
(%)
74.0
74.6
MRFE6VP61K25HR6
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
1.8-
-600 MHz, 1250 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Application Circuits
(1)
— Typical Performance
Frequency
(MHz)
27
40
81.36
87.5--108
144--148
170--230
352
Signal Type
CW
CW
CW
CW
CW
DVB--T
Pulse
(200
sec,
20% Duty Cycle)
CW
CW
P
out
(W)
1300
1300
1250
1100
1250
225
1250
G
ps
(dB)
27
26
27
24
26
25
21.5
D
(%)
81
85
84
80
78
30
66
NI-
-1230-
-4S
MRFE6VP61K25HSR5
NI-
-1230-
-4H
MRFE6VP61K25HR6
352
500
1150
1000
20.5
18
68
58
1. Contact your local Freescale sales office for additional information on specific
circuit designs.
Load Mismatch/Ruggedness
Frequency
(MHz)
230
Signal Type
Pulse
(100
sec,
20%
Duty Cycle)
VSWR
>65:1 at all
Phase Angles
P
out
(W)
1500 Peak
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
NI-
-1230-
-4S GULL
MRFE6VP61K25GSR5
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 V
DD
Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
Characterized with Series Equivalent Large--Signal Impedance Parameters
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2010--2013. All rights reserved.
MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
1
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
