ATC100B102KT50XT 参数 Datasheet PDF下载

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Total Device Dissipation @ T

C

= 25C

Derate above 25C

Operating Junction Temperature

(1,2)

Symbol

V

DSS

V

GS

T

stg

T

C

P

D

T

J

Characteristic

Thermal Resistance, Junction to Case

CW: Case Temperature 63C, 1250 W CW, I

DQ

= 100 mA, 230 MHz

Thermal Impedance, Junction to Case

Pulse: Case Temperature 66C, 1250 W Pulse, 100

sec

Pulse Width, 20% Duty Cycle,

I

DQ

= 100 mA, 230 MHz

Symbol

R

JC

Z

JC

Value

--0.5, +133

--6.0, +10

-- 65 to +150

150

1333

6.67

225

Value

(2,3)

0.15

0.03

Unit

Vdc

Vdc

C

C

W

W/C

C

Table 2. Thermal Characteristics

Unit

C/W

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Class

2, passes 3500 V

B, passes 250 V

IV, passes 4000 V

Table 4. Electrical Characteristics

(T

A

= 25C unless otherwise noted)

Characteristic

Off Characteristics

(4)

Gate--Source Leakage Current

(V

GS

= 5 Vdc, V

DS

= 0 Vdc)

Drain--Source Breakdown Voltage

(V

GS

= 0 Vdc, I

D

= 100 mA)

Zero Gate Voltage Drain Leakage Current

(V

DS

= 50 Vdc, V

GS

= 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(V

DS

= 100 Vdc, V

GS

= 0 Vdc)

On Characteristics

Gate Threshold Voltage

(4)

(V

DS

= 10 Vdc, I

D

= 1776

Adc)

Gate Quiescent Voltage

(V

DD

= 50 Vdc, I

D

= 100 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(4)

(V

GS

= 10 Vdc, I

D

= 2 Adc)

Forward Transconductance

(V

DS

= 10 Vdc, I

D

= 30 Adc)

Dynamic Characteristics

(4)

Reverse Transfer Capacitance

(V

DS

= 50 Vdc



30 mV(rms)ac @ 1 MHz, V

GS

= 0 Vdc)

Output Capacitance

(V

DS

= 50 Vdc



30 mV(rms)ac @ 1 MHz, V

GS

= 0 Vdc)

Input Capacitance

(V

DS

= 50 Vdc, V

GS

= 0 Vdc



30 mV(rms)ac @ 1 MHz)

C

rss

C

oss

C

iss

—

—

—

2.8

185

562

—

—

—

pF

pF

pF

V

GS(th)

V

GS(Q)

V

DS(on)

g

fs

1.7

1.9

—

—

2.2

2.2

0.15

28.0

2.7

2.9

—

—

Vdc

Vdc

Vdc

S

I

GSS

V

(BR)DSS

I

DSS

I

DSS

—

133

—

—

—

—

—

—

1

—

10

20

Adc

Vdc

Adc

Adc

Symbol

Min

Typ

Max

Unit

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Each side of device measured separately.

(continued)

MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5

2

RF Device Data

Freescale Semiconductor, Inc.