欢迎访问ic37.com |
会员登录 免费注册
发布采购

ATC100B5R6BT250XT 参数 Datasheet PDF下载

ATC100B5R6BT250XT图片预览
型号: ATC100B5R6BT250XT
PDF下载: 下载PDF文件 查看货源
内容描述: RF LDMOS宽带集成功率放大器 [RF LDMOS Wideband Integrated Power Amplifiers]
分类和应用: 放大器功率放大器
文件页数/大小: 24 页 / 811 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
 浏览型号ATC100B5R6BT250XT的Datasheet PDF文件第4页浏览型号ATC100B5R6BT250XT的Datasheet PDF文件第5页浏览型号ATC100B5R6BT250XT的Datasheet PDF文件第6页浏览型号ATC100B5R6BT250XT的Datasheet PDF文件第7页浏览型号ATC100B5R6BT250XT的Datasheet PDF文件第9页浏览型号ATC100B5R6BT250XT的Datasheet PDF文件第10页浏览型号ATC100B5R6BT250XT的Datasheet PDF文件第11页浏览型号ATC100B5R6BT250XT的Datasheet PDF文件第12页  
TYPICAL CHARACTERISTICS
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, I
DQ1
= 90 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
I
DQ2
= 210 mA
630 mA
−40
525 mA
−50
135 mA
−10
V
DD
= 28 Vdc, I
DQ2
= 420 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−20
−30
315 mA
−30
I
DQ1
= 45 mA
67.5 mA
112.5 mA
−40
−50
135 mA
90 mA
−60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
−60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 9. Third Order Intermodulation Distortion
versus Output Power @ I
DQ1
= 90 mA
−10
V
DD
= 28 Vdc, I
DQ1
= 90 mA
I
DQ2
= 420 mA, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
Figure 10. Third Order Intermodulation Distortion
versus Output Power @ I
DQ2
= 420 mA
−10
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−20
−20
V
DD
= 28 Vdc, P
out
= 40 W (PEP), I
DQ1
= 90 mA
I
DQ2
= 420 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3−U
IM3−L
−30
−30
−40
3rd Order
5th Order
7th Order
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
−40
IM7−U
−50
IM7−L
IM5−U
IM5−L
−50
−60
−60
1
10
TWO−TONE SPACING (MHz)
100
Figure 11. Intermodulation Distortion
Products versus Output Power
54
53
52
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
51
50
49
48
47
46
45
44
43
11
12
13
14
V
DD
= 28 Vdc, I
DQ1
= 90 mA, I
DQ2
= 420 mA
Pulsed CW, 12
μsec(on),
1% Duty Cycle
f = 2140 MHz
15
16
17
18
19
20
21
22
Actual
P1dB = 46.23 dBm (42 W)
P3dB = 57.22 dBm (52.76 W)
P6dB = 47.77 dBm (59.84 W)
Ideal
38
36
34
32
30
28
26
24
22
20
1
PAE
G
ps
Figure 12. Intermodulation Distortion
Products versus Tone Spacing
50
T
C
= −30_C
25_C
85_C
25_C
85_C
PAE, POWER ADDED EFFICIENCY (%)
−30_C
45
40
35
30
25
20
V
DD
= 28 Vdc
I
DQ1
= 90 mA
I
DQ2
= 420 mA
f = 2140 MHz
10
P
out
, OUTPUT POWER (WATTS) CW
15
10
5
100
P
in
, INPUT POWER (dBm)
Figure 13. Pulsed CW Output Power versus
Input Power
Figure 14. Power Gain and Power Added
Efficiency versus CW Output Power
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
8
RF Device Data
Freescale Semiconductor