TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−10
V
DD
= 28 Vdc, I
DQ
= 1400 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
0
−10
−20
IM3−L
−30
−40
−50
IM5−L
−60
1
10
TWO−TONE SPACING (MHz)
100
IM5−U
IM3−U
V
DD
= 28 Vdc, P
out
= 170 W (PEP), I
DQ
= 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−20
−30
−40
3rd Order
−50
5th Order
−60
1
10
7th Order
100
400
IM7−U
IM7−L
P
out
, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
1
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON THE CCDF (dB)
0
−1
−2
−3
−3 dB = 83.111 W
−4
−5
20
−1 dB = 43.335 W
−2 dB = 61.884 W
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
54
Ideal
η
D
,
DRAIN EFFICIENCY (%)
48
42
36
30
Actual
24
18
120
V
DD
= 28 Vdc, I
DQ
= 1400 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
40
60
80
100
P
out
, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
ACPR, UPPER AND LOWER RESULTS (dBc)
−20
−30
19
V
DD
= 28 Vdc, I
DQ
= 1400 mA, f = 2140 MHz Single−Carrier
W−CDMA, Input Signal PAR = 7.5 dB, ACPR @
±5
MHz
Offset in 3.84 MHz Integrated Bandwidth
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
−50
−30_C
G
ps
, POWER GAIN (dB)
18
17
16
15
14
DPD Corrected, with Memory Correction
−70
40
13
41
42
43
44
45
46
47
48
49
50
1
10
100
P
out
, OUTPUT POWER (dBm)
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 28 Vdc
I
DQ
= 1400 mA
f = 2140 MHz
G
ps
T
C
= −30_C
25_C
85_C
25_C
85_C
40
30
20
10
0
400
50
η
D
,
DRAIN EFFICIENCY (%)
60
−40
−60
η
D
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S21170HR3 MRF7S21170HSR3
RF Device Data
Freescale Semiconductor
7
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
