Freescale Semiconductor
Technical Data
Document Number: AFT18S230S
Rev. 1, 11/2012
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 50 watt RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 1805 to 1880 MHz.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ
= 1800 mA, P
out
= 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
18.9
19.1
19.0
D
(%)
32.0
32.0
32.0
Output PAR
(dB)
7.2
7.1
6.8
ACPR
(dBc)
--35.0
--35.0
--34.0
IRL
(dB)
--19
--18
--11
AFT18S230SR3
1805-
-1880 MHz, 50 W AVG., 28 V
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 12.
NI-
-780S-
-6
N.C. 1
6 VBW
RF
in
/V
GS
2
5 RF
out
/V
DS
N.C. 3
(Top View)
4 VBW
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2012. All rights reserved.
AFT18S230SR3
1
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
