Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 13.6 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 13.6 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 13.6 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Common--Source Amplifier Power Gain
Drain Efficiency
Frequency
(MHz)
870
Signal
Type
CW
P
out
(W)
54
(3 dB Overdrive)
C
rss
C
oss
C
iss
—
—
—
2.1
63
140
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
= 13.6 Vdc, I
DQ
= 500 mA, P
out
= 31 W, f = 870 MHz
G
ps
η
D
16.0
68.0
17.2
71.0
18.5
—
dB
%
Load Mismatch/Ruggedness
(In Freescale Test Fixture, 50 ohm system, I
DQ
= 500 mA)
VSWR
>65:1 at all Phase Angles
Test Voltage, V
DD
17
Result
No Device Degradation
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
