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AFT09MS031GNR1 参数 Datasheet PDF下载

AFT09MS031GNR1图片预览
型号: AFT09MS031GNR1
PDF下载: 下载PDF文件 查看货源
内容描述: RF功率LDMOS晶体管 [RF Power LDMOS Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 21 页 / 980 K
品牌: FREESCALE [ Freescale ]
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TYPICAL CHARACTERISTICS — 760--870 MHz BROADBAND  
REFERENCE CIRCUIT  
5
60  
50  
V
P
= 13.6 Vdc  
= 1 W  
V
= 13.6 Vdc, P = 1 W  
in  
DD  
DD  
V
P
= 12.5 Vdc  
= 1 W  
in  
DD  
4
3
2
1
in  
V
= 12.5 Vdc, P = 1 W  
in  
DD  
40  
30  
V
= 13.6 Vdc, P = 0.5 W  
V
= 13.6 Vdc  
DD  
in  
DD  
V
P
= 12.5 Vdc  
= 0.5 W  
P
= 0.5 W  
DD  
in  
in  
V
P
= 12.5 Vdc  
= 0.5 W  
DD  
20  
10  
0
in  
f = 820 MHz  
4
f = 820 MHz  
1.6  
Detail A  
0
0.8  
2
0
0.4  
V
1.2  
2
0
1
3
5
, GATE--SOURCE VOLTAGE (VOLTS)  
V
, GATE--SOURCE VOLTAGE (VOLTS)  
GS  
GS  
Detail A  
Figure 14. CW Output Power versus Gate--Source Voltage  
120  
18  
17  
16  
70  
60  
50  
40  
30  
20  
10  
V
= 13.6 Vdc  
= 100 mA  
820 MHz  
870 MHz  
DD  
I
DQ  
100  
80  
760 MHz  
G
ps  
870 MHz  
60  
15  
14  
13  
12  
760 MHz  
η
D
40  
760 MHz  
820 MHz  
820 MHz  
20  
0
P
out  
870 MHz  
1
0.03  
0.1  
P , INPUT POWER (WATTS)  
2
in  
Figure 15. Power Gain, CW Output Power and  
Drain Efficiency versus Input Power and  
Frequency  
AFT09MS031NR1 AFT09MS031GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
12