Freescale Semiconductor
Technical Data
Document Number: AFT09MS031N
Rev. 0, 5/2012
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
764 to 941 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Narrowband Performance
(13.6 Vdc, I
DQ
= 500 mA, T
A
= 25°C, CW)
Frequency
(MHz)
764
870
941
G
ps
(dB)
18.0
17.2
15.7
η
D
(%)
74.1
71.0
68.1
P1dB
(W)
32
31
31
TO-
-270-
-2
PLASTIC
AFT09MS031NR1
AFT09MS031NR1
AFT09MS031GNR1
764-
-941 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
800 MHz Broadband Performance
(13.6 Vdc, I
DQ
= 100 mA, T
A
= 25°C, CW)
Frequency
(MHz)
760
820
870
G
ps
(dB)
15.7
15.7
15.5
η
D
(%)
62.0
63.0
61.0
P1dB
(W)
44
37
36
Load Mismatch/Ruggedness
Frequency
(MHz)
870
Signal
Type
CW
VSWR
>65:1 at all
Phase Angles
P
out
(W)
54
(3 dB Overdrive)
Test
Voltage
17
Result
No Device
Degradation
TO-
-270- GULL
-2
PLASTIC
AFT09MS031GNR1
Features
•
Characterized for Operation from 764 to 941 MHz
•
Unmatched Input and Output Allowing Wide Frequency Range Utilization
•
Integrated ESD Protection
•
Integrated Stability Enhancements
•
Wideband — Full Power Across the Band (764–870 MHz)
•
225°C Capable Plastic Package
•
Exceptional Thermal Performance
•
High Linearity for: TETRA, SSB, LTE
•
Cost--effective Over--molded Plastic Packaging
•
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
•
Output Stage 800 MHz Trunking Band Mobile Radio
•
Output Stage 900 MHz Trunking Band Mobile Radio
Gate
Drain
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
AFT09MS031NR1 AFT09MS031GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
