ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
HALF-BRIDGE OUTPUTS HB3 AND HB4
Switch On Resistance
R
mΩ
DS(ON)-HB34
High Side, TJ = 25 °C, ILOAD = 1.0 A
Low Side, TJ = 25 °C, ILOAD = 1.0 A
–
–
275
275
325
325
Over-current Shutdown
High Side
I
A
HBOC34
4.8
4.8
–
–
7.2
7.2
Low Side
Over-current Shutdown blanking time(19)
Switching Frequency(19)
t
–
–
4.8
–
–
μs
kHz
V
OCB
f
25
PWM
Freewheeling Diode Forward Voltage
High Side, TJ = 25 °C, ILOAD = 1.0 A
Low Side, TJ = 25 °C, ILOAD = 1.0 A
V
–
–
0.9
0.9
–
–
HSF
V
LSF
Leakage Current
I
–
<0.2
10
µA
LeakHB
Low Side Current to Voltage Ratio(20)
CR
V/A
RATIOHB34
V
V
[V] / I [A], CSA = 1, (measured and trimmed IHS = 500 mA)
HB
3.5
0.7
5.0
1.0
6.5
1.3
ADOUT
ADOUT
[V] / I [A], CSA = 0, (measured and trimmed IHS = 2.0 A)
HB
EC OUTPUTS EC AND ECR
Switch On Resistance
T1 measured on ECR Pin, TJ = 25 °C, ILOAD = 100 mA
T2 measured on EC Pin, TJ = 25 °C, ILOAD = 100 mA
R
R
–
–
1.0
1.2
Ω
DS(ON)T1
400
600
mΩ
DS(ON)T2
Over-current Shutdown
T1 (short to GND)
A
I
I
0.6
0.6
–
–
1.0
1.0
T1OC
T2OC
T2 (short to VSUP)
Open Load Detection (Bit ECOLT is set)
set @ min. output load
R
–
10
–
kΩ
OC
DAC resolution (from 0 to 1.4 V)
Regulated Output Voltage (@ I = 1.0 mA)
Notes
EC
–
6.0
–
–
Bit
V
DACRES
VEC
0.18
1.4
REG
19. This parameter is guaranteed by process monitoring but is not production tested.
20. This parameter is guaranteed only if correct trimming was applied
908E622
Analog Integrated Circuit Device Data
Freescale Semiconductor
12