System modules
Table 24. NVM reliability specifications (continued)
Symbol Description
Min.
Typ.1
Max.
Unit
Notes
Write endurance
3
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree4k
nnvmwree8k
• EEPROM backup to FlexRAM ratio = 16
35 K
315 K
1.27 M
10 M
175 K
1.6 M
6.4 M
50 M
—
—
—
—
—
writes
writes
writes
writes
writes
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio = 8192
20 M
100 M
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum and typical values
assume all byte-writes to FlexRAM.
8.5 Analog
8.5.1 12-bit Cyclic Analog-to-Digital Converter (ADC) Parameters
Table 25. 12-bit ADC Electrical Specifications
Characteristic
Symbol
Min
Typ
Max
Unit
Recommended Operating Conditions
Supply Voltage1
Vrefh Supply Voltage2
ADC Conversion Clock3
Conversion Range
VDDA
Vrefhx
fADCCLK
RAD
2.7
3.0
3.3
3.6
VDDA
20
V
V
0.6
MHz
V
VREFL
VREFH
Input Voltage Range4
VADIN
V
External Reference
VREFL
VSSA
VREFH
VDDA
Internal Reference
Timing and Power
Conversion Time
tADC
tADS
6
ADC Clock Cycles
ADC Clock Cycles
ADC Clock Cycles
Sample Time
1
5
ADC Power-Up Time (from adc_pdn)
tADPU
13
Table continues on the next page...
MC56F844xx Advance Information Data Sheet, Rev. 2, 06/2012.
Freescale Semiconductor, Inc.
41
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