System modules
Figure 8. Relaxation Oscillator Temperature Variation (Typical) After Trim (Preliminary)
8.4 Memories and memory interfaces
8.4.1 Flash Memory Characteristics
Table 22. Flash Timing Parameters
Characteristic
Symbol
thvpgm4
Min
—
Typ
63
Max
143
113
452
Unit
µs
Longword Program high-voltage time1
Sector Erase high-voltage time 2
Erase Block high-voltage time for 256 KB
thversscr
—
13
ms
ms
thversblk256k
—
52
1. There is additional overhead that is part of the programming sequence. See the device Reference Manual for detail.
2. Specifies page erase time.
MC56F8455x Advance Information Data Sheet, Rev. 2, 06/2012.
38
Freescale Semiconductor, Inc.
Preliminary
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