ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 4.5 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TA ≤ 125°C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING (CONTINUED)
Over-current Low Detection Blanking Time (OCLT[1:0])
ms
tOCL0
tOCL1
tOCL2
tOCL3
00
01
10
11
108
7.0
155
10
202
13
0.8
1.2
1.6
0.08
0.15
0.25
Over-current High Detection Blanking Time
CS to CSNS Valid Time(23)
tOCH
1.0
–
10
–
20
10
μs
μs
tCNSVAL
Output Switching Delay Time (OSD[2:0])
ms
tOSD0
tOSD1
tOSD2
tOSD3
tOSD4
tOSD5
tOSD6
tOSD7
000
001
010
011
100
101
110
111
–
0.0
75
–
52
95
105
157
210
262
315
367
150
225
300
375
450
525
195
293
390
488
585
683
Watchdog Timeout (WD[1:0])(24)
ms
00
01
10
11
tWDTO0
tWDTO1
tWDTO2
tWDTO3
434
207
620
310
806
403
1750
875
2500
1250
3250
1625
SPI INTERFACE CHARACTERISTICS
Recommended Frequency of SPI Operation
Required Low-state Duration for RST(25)
fSPI
–
–
–
3.0
MHz
ns
tWRST
50
167
Notes
23. Time necessary for the CSNS to be within ±5% of the targeted value.
24. Watchdog timeout delay measured from the rising edge of WAKE to RST from a sleep state condition to output turn-ON with the output
driven OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of tWDTO is consistent for all configured
watchdog timeouts.
25. RST low duration measured with outputs enabled and going to OFF or disabled condition.
33982
Analog Integrated Circuit Device Data
Freescale Semiconductor
12
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