ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions 4.5V ≤ VDD ≤ 5.5V, 6.0V ≤ VPWR ≤ 27V, -40°C ≤ TA ≤ 125°C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER INPUT
Battery Supply Voltage Range
Full Operational
VPWR
V
6.0
–
–
–
27
20
VPWR Operating Supply Current
Output ON, IHS = 0A
IPWR(ON)
mA
VPWR Supply Current
IPWR(SBY)
mA
Output OFF, Open Load Detection Disabled, WAKE > 0.7VDD
RST = VLOGIC HIGH
,
–
–
5.0
Sleep State Supply Current (VPWR < 14V, RST < 0.5V, WAKE < 0.5V)
IPWR(SLEEP)
μA
TJ = 25°C
TJ = 85°C
–
–
–
–
10
50
VDD Supply Voltage
VDD(ON)
IDD(ON)
4.5
5.0
5.5
V
VDD Supply Current
mA
No SPI Communication
3.0MHz SPI Communication
–
–
–
–
1.0
5.0
VDD Sleep State Current
IDD(SLEEP)
VPWR(OV)
VPWR(OVHYS)
VPWR(UV)
VPWR(UVHYS)
VPWR(UVPOR)
–
28
0.2
5.0
–
–
32
5.0
36
1.5
6.0
–
μA
V
Over-voltage Shutdown Threshold
Over-voltage Shutdown Hysteresis
Under-voltage Output Shutdown Threshold(8)
Under-voltage Hysteresis(9)
0.8
5.5
0.25
–
V
V
V
Under-voltage Power-ON Reset
POWER OUTPUT
–
5.0
V
Output Drain-to-Source ON Resistance (IHS = 30A, TJ = 25°C)
RDS(ON)
RDS(ON)
RDS(ON)
mΩ
mΩ
mΩ
VPWR = 6.0V
VPWR = 10V
VPWR = 13V
–
–
–
–
–
–
3.0
2.0
2.0
Output Drain-to-Source ON Resistance (IHS = 30A, TJ = 150°C)
V
PWR = 6.0V
–
–
–
–
–
–
5.1
3.4
3.4
VPWR = 10V
VPWR = 13V
Output Source-to-Drain ON Resistance (IHS = 30A, TJ = 25°C)(10)
V
PWR = -12V
–
2.0
4.0
Notes
8. This applies to all internal device logic that is supplied by VPWR and assumes that the external VDD supply is within specification.
9. This applies when the under-voltage fault is not latched (IN = 0).
10. Source-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VPWR
.
33982
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
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