Freescale Semiconductor, Inc.
DYNAMIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 4.5 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TJ ≤ 150°C unless otherwise noted. Typical
values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING HS0, HS1, HS2, AND HS3 (continued)
Overcurrent High Detection Blanking Time
tOCH
1.0
–
10
–
20
10
µs
µs
CNSVAL
CS to CSNS Valid Time (Note 27)
Watchdog Timeout (WD[1:0]) (Note 28)
ms
tWDTO0
tWDTO1
tWDTO2
tWDTO3
00
01
10
11
496
248
2000
1000
620
310
2500
1250
806
403
3250
1625
Notes
27. Time necessary for the CSNS to be with ±5% of the targeted value.
28. Watchdog timeout delay measured from the rising edge of WAKE or RST from a sleep state condition, to output turn-ON with the output driven
OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of tWDTO is consistent for all configured watchdog
timeouts.
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MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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