ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 3.0 V
≤
VDD
≤
5.5 V, 6.0 V
≤
VPWR
≤
32 V, -40°C
≤
TC
≤
125°C, and calibrated
timers, unless otherwise noted. Where typical values reflect the parameter’s approx. average value with VPWR = 13 V, TA =
25°C.
Characteristic
INJECTOR DRIVER OUTPUTS (OUT 0:3) (Continued)
Output Clamp Voltage 1
I
D
= 20 mA
Output Leakage Current
VDD = 5.0 V, V
DRAIN
= 24 V, Open Load Detection Current Disabled
VDD = 5.0 V, V
DRAIN
= V
OC
- 1.0 V, Open Load Detection Current Disabled
VDD = 0 V, V
DRAIN
= 24 V, Sleep State
Over-temperature Shutdown
(10)
Over-temperature Shutdown Hysteresis
(10)
IGNITION (IGBT) GATE DRIVER PARAMETERS (GD 0:3 FB0:3)
Gate Driver Output Voltage
I
GD
= 500
μA
I
GD
= -500
μA
Sleep Mode Gate to Source Resistor
Sleep Mode FBx pin Leakage Current
VDD = 0 V, V
FBx
= 24 V,
Feedback Sense Current (FBx Input Current)
FBx = 32 V, Outputs Programmed OFF
Gate Drive Source Current (1
≤
V
GD
≤
3)
Gate Drive Turn Off Resistance
I
GATEDRIVE
R
DS(ON)
500
SOFT SHUTDOWN FUNCTION (VOLTAGES REFERENCED TO IGBT COLLECTOR)
Low Voltage Flyback Clamp
Driver Command Off, Soft Shutdown Enabled, GDx = 2.0 V
Spark Duration Comparator Threshold
(referenced to IC Ground Tab)
Rising Edge Relative to VPWR
Spark Duration Comparator Threshold
(referenced to IC Ground Tab)
(11)
Falling Edge Relative to VPWR, Default = 5.5 V Assuming ideal external
10:1 voltage divider. Voltage measured at high end of divider, not at pin.
Tolerance of divider not included
Open Secondary Comparator Threshold (referenced from primary to
Rising Edge Relative to GND. No hysteresis with 10:1 voltage divider.
CURRENT SENSE COMPARATOR (RSP, RSN)
NOMI Trip Threshold Accuracy - Steady State Condition
3.0 A across 0.02
Ω
(RSP - RSN = 60 mV)
10.75 A across 0.04
Ω
(RSP - RSN = 430 mV)
NOMI
TRIPTA
-10
–
10
%
V
TH-RISE
11.5
–
15.5
V
TH-FALL
V
LVC
V
TH-RISE
18
1.2
4.9
7.4
9.9
21
2.75
5.5
8.2
11.00
24
3.6
6.1
9.1
12.1
V
VPWR
+9.0
VPWR
+11
VPWR + 13
V
V
–
1000
650
780
I
FBX(FLT-SNS)
1.0
950
μA
Ω
V
GS (ON)
V
GS (OFF)
R
GS (PULLDOWN
)
Symbol
Min
Typ
Max
Unit
V
OC1
48
I
OUT (LKG)
–
–
–
T
LIM
T
LIM (HYS)
155
5.0
–
–
–
–
10
20
3000
10
185
15
53
58
V
μA
°
C
°
C
4.8
0
100
7.0
0.375
200
9.0
0.5
300
V
KΩ
μA
I
FBX (LKG)
–
–
1.0
μA
V
33810
8
Analog Integrated Circuit Device Data
Freescale Semiconductor
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