TYPICAL CHARACTERISTICS
1000
100
100
C
oss
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
C
rss
I
D
, DRAIN CURRENT (AMPS)
C
iss
C, CAPACITANCE (pF)
10
10
1
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
1
1
T
C
= 25°C
10
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
100
200
Figure 4. Capacitance versus Drain-
-Source Voltage
5
4
G
ps
, POWER GAIN (dB)
V
GS
= 3 V
3
2.75 V
2
2.5 V
1
2.25 V
0
0
20
40
60
80
100
120
21
1
2.63 V
27
26
25
24
337 mA
23
22
225 mA
Figure 5. DC Safe Operating Area
I
DQ
= 675 mA
563 mA
450 mA
I
D
, DRAIN CURRENT (AMPS)
V
DD
= 50 Vdc
f = 220 MHz
10
P
out
, OUTPUT POWER (WATTS) CW
100
200
DRAIN VOLTAGE (VOLTS)
Figure 6. DC Drain Current versus Drain Voltage
--10
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
--15
--20
--25
--30
--35
--40
--45
--50
--55
--60
5
10
100
P
out
, OUTPUT POWER (WATTS) PEP
300
58
56
54
52
50
48
22
Figure 7. CW Power Gain versus Output Power
V
DD
= 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
I
DQ
= 225 mA
336 mA
450 mA
563 mA
685 mA
900 mA
P
out
, OUTPUT POWER (dBm)
P3dB = 52.61 dBm (182.39 W)
P1dB = 52.27 dBm (168.66 W)
Ideal
Actual
V
DD
= 50 Vdc, I
DQ
= 450 mA
f = 220 MHz
24
26
28
30
32
P
in
, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion
versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V2150NR1 MRF6V2150NBR1
RF Device Data
Freescale Semiconductor
5
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
