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2743019447 参数 Datasheet PDF下载

2743019447图片预览
型号: 2743019447
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管 [RF Power Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管射频PC
文件页数/大小: 11 页 / 492 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
−10
−11
−12
−13
−14
−15
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
−10
−11
−12
−13
−14
−15
−16
IRL, INPUT RETURN LOSS (dB)
2700 mA
I
DQ
= 900 mA
−40
IRL, INPUT RETURN LOSS (dB)
16
15.8
15.6
G
ps
, POWER GAIN (dB)
15.4
15.2 V
DD
= 28 Vdc, P
out
= 35 W (Avg.),
15 I
DQ
= 1800 mA, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
14.8
14.6
14.4
14.2
G
ps
IRL
η
D
24
23
22
21
20
−40
−45
ACPR
ALT1
−50
−55
−60
−65
14
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
out
= 35 Watts Avg.
15.2
15.1
15
G
ps
, POWER GAIN (dB)
14.9
14.8
14.7
14.6
14.5
14.4
14.3
14.2
ACPR
ALT1
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 70 W (Avg.),
I
DQ
= 1800 mA, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
35
34
33
32
31
30
−30
−35
−40
−45
−50
IRL
−55
14.1
−60
14
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
out
= 70 Watts Avg.
17
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 2700 mA
16
G
ps
, POWER GAIN (dB)
2250 mA
1800 mA
15
1350 mA
14
−20
V
DD
= 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−30
−50
1800 mA
−60
0.1
1
1350 mA
10
2250 mA
13
12
0.1
900 mA
V
DD
= 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
1
10
100
400
100
300
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
5