TYPICAL CHARACTERISTICS
1000
C
iss
C
oss
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
I
D
, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
100
100
10
10
C
rss
1
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
1
1
T
C
= 25°C
10
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
100
Figure 4. Capacitance versus Drain-
-Source Voltage
10
9
I
D
, DRAIN CURRENT (AMPS)
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
2.25 V
120
18
10
2.5 V
2.63 V
2.75 V
G
ps
, POWER GAIN (dB)
V
GS
= 3 V
23
22
21
900 mA
20
19
Figure 5. DC Safe Operating Area
I
DQ
= 1350 mA
1125 mA
450 mA
650 mA
V
DD
= 50 Vdc
f = 450 MHz
100
P
out
, OUTPUT POWER (WATTS) CW
600
DRAIN VOLTAGE (VOLTS)
Figure 6. DC Drain Current versus Drain Voltage
0
--5
--10
--15
--20
--25
--30
--35
--40
--45
--50
--55
--60
10
60
V
DD
= 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
P
out
, OUTPUT POWER (dBm)
59
58
57
56
55
54
53
52
51
100
P
out
, OUTPUT POWER (WATTS) PEP
600
50
28
Figure 7. CW Power Gain versus Output Power
Ideal
P3dB = 56.06 dBm (403 W)
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
P1dB = 55.15 dBm (327 W)
Actual
I
DQ
= 450 mA
650 mA
900 mA
1350 mA
1125 mA
V
DD
= 50 Vdc, I
DQ
= 900 mA
f = 450 MHz
29
30
31
32
33
34
35
36
37
38
P
in
, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion
versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V4300NR1 MRF6V4300NBR1
RF Device Data
Freescale Semiconductor
5
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
