TYPICAL APPLICATIONS
FUNCTIONAL TERMINAL DESCRIPTION
TYPICAL APPLICATIONS
Figure 8 shows a typical application for the 17531A. When
applying the gate voltage to the CRES terminal from an
The internal charge pump of this device is generated from
the VDD supply; therefore, care must be taken to provide
sufficient gate-source voltage for the high-side MOSFETs
when VM >> VDD (e.g., VM = 5.0 V, VDD = 3.3 V), in order to
ensure full enhancement of the high-side MOSFET channels.
external source, be sure to connect it via a resistor equal to,
V
or greater than, RG
=
C
/0.02 Ω.
RES
3.3 V 5.0 V
17531A
VDD
VM
C1L
C1H
NC C2L
NC C2H
NC
NC
V
CRES < 14 V
OUT1A
V
RG
> CRES/0.02 Ω
CRES
RG
0.01 µF
OUT1B
OUT2A
IN1A
IN1B
IN2A
MCU
IN2B
OUT2B
PSAVE
GND
NC = No Connect
Figure 8. 17531A Typical Application Diagram
PCB LAYOUT
CEMF SNUBBING TECHNIQUES
Care must be taken to protect the IC from potentially
damaging CEMF spikes induced when commutating currents
in inductive loads. Typical practice is to provide snubbing of
voltage transients via placing a capacitor or zener at the
supply terminal (VM) (see Figure 9).
When designing the printed circuit board (PCB), connect
sufficient capacitance between power supply and ground
terminals to ensure proper filtering from transients. For all
high-current paths, use wide copper traces and shortest
possible distances.
3.3 V
5.0 V
3.3 V
5.0 V
17531A
17531A
VM
VM
VDD
VDD
C1L
C1L
C1H
C2L
C1H
C2L
OUT
OUT
OUT
OUT
C2H
CRES
C2H
CRES
GND
GND
Figure 9. CEMF Snubbing Techniques
17531A
Analog Integrated Circuit Device Data
Freescale Semiconductor
11
FREESCALE [ Freescale ]
