ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, -40 C TA 125 C, GND = 0 V. Typical values are
average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)
Current Sensing Ratio(14)
–
CSNS_ratio bit = 0 (high current mode)
CSNS_ratio bit = 1 (low current mode)
CSR0
CSR1
–
–
1/1500
1/500
–
–
Minimum measurable load current with compensated error(15)
CSNS leakage current in OFF state (CSNSx_en = 0, CSNS_ratio bit_x = 0)
Systematic offset error (see Current Sense Errors)
Random offset error
I_LOAD_MIN
ICSR_LEAK
–
-4.0
–
–
–
50
+4.0
–
mA
µA
mA
mA
%
I_LOAD_ERR_SYS
I_LOAD_ERR_RAND
ESR0_ERR
5.5
–
-125
125
E
Output Current Sensing Error (%, uncompensated(16) at output
SR0
Current level (Sense ratio CSR0 selected):
TJ=-40 C
-13
-12
-17
-31
–
–
–
–
13
12
17
31
3.0 A
1.5 A
0.75 A
0.375 A
TJ=125C
3.0 A
1.5 A
-10
-9.0
-12
-19
–
–
–
–
10
9.0
12
19
0.75 A
0.375 A
TJ=25 to 125C
3.0 A
-10
-9.0
-12
-22
–
–
–
–
10
9.0
12
22
1.5 A
0.75 A
0.375 A
Notes:
14. Current Sense Ratio CSRx = ICSNS / (IHS[x] +I_LOAD_ERR_SYS
)
15. See note (16), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and Use of Offset Compensation).
Further accuracy improvements can be obtained by performing a 1 or 2 point calibration (see Application Note)
16. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see
section Current Sense Error Model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS
16XSD200
Analog Integrated Circuit Device Data
10
Freescale Semiconductor