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100B8R2CW 参数 Datasheet PDF下载

100B8R2CW图片预览
型号: 100B8R2CW
PDF下载: 下载PDF文件 查看货源
内容描述: RF LDMOS宽带集成功率放大器 [RF LDMOS Wideband Integrated Power Amplifiers]
分类和应用: 放大器功率放大器
文件页数/大小: 16 页 / 702 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Channel Temperature
Input Power
Symbol
V
DSS
V
GS
T
stg
T
J
P
in
Value
- 0.5, +65
- 0.5, +8
- 65 to +175
200
20
Unit
Vdc
Vdc
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Stage 1
Stage 2
Stage 3
Symbol
R
θJC
Value
(1)
10.5
5.1
2.3
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 60 mA, I
DQ2
= 350 mA, I
DQ3
= 265 mA,
P
out
= 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Input Return Loss
Adjacent Channel Power Ratio
P
out
= 0.4 W Avg.
P
out
= 1.26 W Avg.
G
ps
IRL
ACPR
- 53.5
- 52
- 50
29
31.5
- 25
- 10
dB
dB
dBc
Typical Performances
(In Freescale Test Fixture tuned for 0.4 W Avg. W - CDMA driver) V
DD
= 28 Vdc, I
DQ1
= 60 mA, I
DQ2
= 350 mA,
I
DQ3
= 265 mA, 2110 MHz<Frequency <2170 MHz
Saturated Pulsed Output Power
(f = 1 kHz, Duty Cycle 10%)
Quiescent Current Accuracy over Temperature ( - 10 to 85°C)
(2)
Gain Flatness in 30 MHz Bandwidth
Deviation from Linear Phase in 30 MHz Bandwidth
Delay @ P
out
= 0.4 W CW Including Output Matching
Part - to - Part Phase Variation
P
sat
ΔI
QT
G
F
Φ
Delay
ΔΦ
43
±5
0.13
±1
1.6
±15
W
%
dB
°
ns
°
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
(continued)
MW4IC2230NBR1 MW4IC2230GNBR1
2
RF Device Data
Freescale Semiconductor