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100B1R5JP500X 参数 Datasheet PDF下载

100B1R5JP500X图片预览
型号: 100B1R5JP500X
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强模式横向的MOSFET [N-Channel Enhancement-Mode Lateral MOSFETs]
分类和应用:
文件页数/大小: 20 页 / 928 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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TYPICAL CHARACTERISTICS — 460 - 470 MHz
21.5
21
20.5
G
ps
, POWER GAIN (dB)
20
19.5
19
18.5
18
17.5
17
16.5
16
430
440
450
460
470
480
f, FREQUENCY (MHz)
ALT1
η
D
V
DD
= 28 Vdc, P
out
= 28 W (Avg.)
I
DQ
= 1250 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
ACPR
IRL
G
ps
38
35
32
29
26
−40
ACPR (dBc), ALT1 (dBc)
−45
−50
−55
−60
−65
−70
490
η
D
, DRAIN
EFFICIENCY (%)
−1
−3
−5
−7
−9
−11
−13
η
D
, DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
1250 mA
100
P
out
, OUTPUT POWER (WATTS) PEP
400
ACPR (dBc), ALT1 (dBc)
1850 mA
−30
−35
−40
−45
950 mA
I
DQ
= 650 mA
−2
−4
−6
−8
−10
−12
−14
1550 mA
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ P
out
= 28 Watts Avg.
20.8
20.3
19.8
G
ps
, POWER GAIN (dB)
19.3
18.8
18.3
17.8
17.3
16.8
16.3
15.8
430
440
450
460
470
480
f, FREQUENCY (MHz)
ALT1
IRL
η
D
V
DD
= 28 Vdc, P
out
= 56 W (Avg.)
I
DQ
= 1250 mA, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
ACPR
G
ps
55
50
45
40
35
−35
−40
−45
−50
−55
−60
490
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ P
out
= 56 Watts Avg.
23
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1850 mA
22
G
ps
, POWER GAIN (dB)
21
20
19
18
17
6
10
100
P
out
, OUTPUT POWER (WATTS) PEP
400
1550 mA
1250 mA
950 mA
650 mA
−10
−15
−20
−25
V
DD
= 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
V
DD
= 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
10
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
5