TYPICAL CHARACTERISTICS — 460 - 470 MHz
26
25
24
G
ps
, POWER GAIN (dB)
23
22
21
η
D
T
C
= −30_C
25_C
G
ps
25_C
85_C
60
50
40
30
20
10
0
300
20 85_C
19
18
2
10
P
out
, OUTPUT POWER (WATTS) CW
100
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
21.5
21
G
ps
, POWER GAIN (dB)
20.5
20
19.5
19
32 V
18.5
18
17.5
0
50
100
28 V
V
DD
= 12 V
16 V
24 V
20 V
150
200
250
I
DQ
= 1250 mA
f = 465 MHz
P
out
, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
7
η
D
,
DRAIN EFFICIENCY (%)
V
DD
= 28 Vdc
I
DQ
= 1250 mA
f = 465 MHz
80
−30_C
70